APTGF150DA120T APTGF150DA120T ? rev 0 january, 2005 apt website ? http:/ / www.advancedpower.com 1 - 5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 200 i c continuous collector current t c = 80c 150 i cm pulsed collector current t c = 25c 300 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 961 w rbsoa reverse bias safe operating area t j = 150c 300a @ 1200v these devices are sensitive to electrostatic discharge. proper handing procedures should be followed. cr1 vbus sense nt c2 q2 g2 nt c1 out vbus e2 0/vbus vbus out out ntc2 ntc1 0/vbus e2 e2 g2 g2 vbus sense v ces = 1200v i c = 150a @ tc = 80c applicatio n ? ac and dc motor control ? switched mode power supplies ? power factor correction features ? non punch through (npt) fast igbt - low voltage drop - low tail current - switching freque nc y up to 50 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? internal thermistor for temperature monitoring ? high level of integration benefits ? outsta ndi ng perfor ma nce at hi gh freq ue nc y operation ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? easy paralleling due to positive tc of vcesat ? low profile b oost choppe r npt igbt power module
APTGF150DA120T APTGF150DA120T ? rev 0 january, 2005 apt website ? http:/ / www.advancedpower.com 2 - 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 0.1 3 i ces zero gate voltage collector current v ge = 0v v ce = 1200v t j = 125c 5 ma t j = 25c 3.2 3.7 v ce(on) collector emitter on voltage v ge =15v i c = 150a t j = 125c 3.9 v v ge(th) gate threshold voltage v ge = v ce , i c = 5 ma 4.5 6.5 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 500 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 10.2 c oes output capacitance 1.4 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 0.75 nf t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 310 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 150a r g = 5.6 ? 20 ns t d(on) turn-on delay time 130 t r rise time 60 t d(off) turn-off delay time 360 t f fall time 30 ns e on turn-on switching energy 18 e off turn-off switching energy inductive switching (125c) v ge = 15v v bus = 600v i c = 150a r g = 5.6 ? 8 mj reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 500 i rm maximum reverse leakage current v r =1200v t j = 125c 1000 a i f(a v) maximum average forward current 50% duty cycle tc = 70c 200 a i f = 200a 2 2.5 i f = 400a 2.3 v f diode forward voltage i f = 200a t j = 125c 1.8 v t j = 25c 420 t rr reverse recovery time i f = 200a v r = 800v di/dt =400a/ s t j = 125c 520 ns t j = 25c 2.5 q rr reverse recovery charge i f = 200a v r = 800v di/dt =400a/s t j = 125c 10.7 c
APTGF150DA120T APTGF150DA120T ? rev 0 january, 2005 apt website ? http:/ / www.advancedpower.com 3 - 5 temperature sensor ntc symbol characteristic min typ max unit r 25 resistance @ 25c 68 k ? b 25/85 t 25 = 298.16 k 4080 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 thermal and package characteristics symbol characteristic min typ max unit igbt 0.13 r thjc junction to case diode 0.32 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 4.7 n.m wt package weight 160 g package outline t: thermistor temperature r t : thermistor value at t
APTGF150DA120T APTGF150DA120T ? rev 0 january, 2005 apt website ? http:/ / www.advancedpower.com 4 - 5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 50 100 150 200 250 300 0123456 v ce (v) i c (a) output characteristics v ge =15v v ge =12v v ge =20v v ge =9v 0 50 100 150 200 250 300 0123456 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c 0 50 100 150 200 250 300 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff 0 8 16 24 32 40 48 56 0 50 100 150 200 250 300 i c (a) e (mj) v ce = 600v v ge = 15v r g = 5.6 ? t j = 125c eon eoff 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 45 50 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 150a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 50 100 150 200 250 300 350 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =125c r g =5.6 ? maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGF150DA120T APTGF150DA120T ? rev 0 january, 2005 apt website ? http:/ / www.advancedpower.com 5 - 5 forward characteristic of diode t j =25c t j =125c 0 100 200 300 400 500 00.511.522.53 v f (v) i c (a) hard switching zcs zvs 0 10 20 30 40 50 60 70 80 90 100 0 40 80 120 160 200 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =5.6 ? t j =125c t c =75c operatin g frequenc y vs collector current maximum effective transient thermal impedance, junction to pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
|
